Light emitting semiconductor device and a method for making the same
US4017881A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1975 |
| Grant date | Apr 12, 1977 |
| Priority date | — |
| Expiry date | Sep 11, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/085
Abstract
In a method for making a light emitting device having hemispherical dome type geometry, a p-conductivity type and then an n-conductivity type layer are successively grown epitaxially on a substrate made of a mixed compound semiconductor crystal having a band gap wider than the two above-mentioned layers. A surface portion of these epitaxially grown layers, which is not covered by a mask deposited on the n-conductivity type layer at a position where a p-n junction is to be formed, is doped with p-conductivity type impurities so that a small n-conductivity type region is surrounded by a region converted into p-conductivity type. The other side of the crystal is formed into a hemispherical shape so that the n-conductivity type region is located at the central portion of the hemisphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.