Discrete semiconductor device having polymer resin as insulator and method for making the same
US4017886A · kind A · utility
42Cited by
9References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1975 |
| Grant date | Apr 12, 1977 |
| Priority date | — |
| Expiry date | May 16, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.