Thin film circuit

US4020222A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmold Kausche · Munich, DE
• Alois Schauer · Kleinmachnow, DE

Key dates

• Filing date: Jun 18, 1975
• Grant date: Apr 26, 1977
• Expiry date: Jun 18, 1995

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31678

Abstract

A thin film circuit consisting of a planar substrate of insulating material and a thin metal film formed from an alloy of aluminum with between 2 to 20 atom percent tantalum from which resistors and capacitors are developed. The metal film has an equivalent composition to a film which is formed by means of reactive cathode sputtering. In particular, the film is equivalent to a film formed using a cathode of aluminum and tantalum which is reactively sputtered in a sputtering atmosphere containing oxygten with a low partial pressure.In such an arrangement, the temperature coefficient of resistance and the capacity temperature coefficient compensate one another. The alloy films have a high oxidation stability and the resistors and capacitors therefrom have a high resistance to aging.