Hall element and method of manufacturing same
US4021767A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1975 |
| Grant date | May 3, 1977 |
| Priority date | — |
| Expiry date | Jul 11, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
Abstract
A cleaved surface of a crystal is used as a substrate for evaporation, and a high mobility semiconductor is evaporated to a thickness of 0.5 to 1.5 .mu.m to form a deposited thin semiconductor film, on which a first magnetizable member having a high magnetic permeability is applied with an adhesive. Subsequently the substrate is removed, and an electrode is formed on the exposed surface of the evaporated thin film, and a second magnetizable member is applied thereon with an adhesive. Where a special humidity resistance is required, a reinforcing layer of an electrically insulating and moisture-impervious inorganic material is formed directly on the evaporated thin semiconductor film before the first magnetizable member is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.