Inverted heterojunction photodiode

US4021836A · kind A · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• Austin M. Andrews, II · Newbury Park, US
• John E. Clarke · Newbury Park, US
• Edward R. Gertner · Thousand Oaks, US
• Joseph T. Longo · Thousand Oaks, US
• Richard C. Eden · Thousand Oaks, US

Key dates

• Filing date: Apr 12, 1976
• Grant date: May 3, 1977
• Expiry date: Apr 12, 1996

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/135

Abstract

An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 .mu.m portion of the infrared spectrum and operable above 77.degree. K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second active layer of a Pb.sub..80 Sn.sub..20 Te material on said buffer layer. The first and second layers are grown by liquid phase epitaxy.