Semiconductor device manufacture
US4023725A · kind A · utility
35Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1975 |
| Grant date | May 17, 1977 |
| Priority date | — |
| Expiry date | Mar 3, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15787
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of bonding a semiconductor body to a supporting member where the whole back face of the semiconductor body is covered with a thin evaporated layer of chromium or titanium, which layer is then covered with a thin evaporated layer of rhodium, platinum or palladium, which is in turn bonded by a film of solder to the supporting member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.