Semiconductor device having Al-Mn or Al-Mn-Si alloy electrodes
US4024567A · kind A · utility
7Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1976 |
| Grant date | May 17, 1977 |
| Priority date | — |
| Expiry date | Jun 4, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a conductive layer for wiring which is made of an Al alloy containing Mn in an amount greater than 1 percent by weight and below 6 percent by weight. The semiconductor device has excellent corrosion resistance, and has a high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.