Sputtering apparatus and methods using a magnetic field
US4025410A · kind A · utility
18Cited by
13References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 25, 1975 |
| Grant date | May 24, 1977 |
| Priority date | — |
| Expiry date | Aug 25, 1995 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/35
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The operation of a sputtering apparatus is improved by selectively enhancing the sputtering on portions of a cathodic target located across from a peripheral area of a workholder. Such enhancement is produced by a magnetic field having flux lines extending substantially parallel to the target into a peripheral segment of a space between the target and the workholder. Relative motion between the magnetic field and the workholder uniformly distributes the effect of the increase in sputtering over the entire periphery of the workholder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.