MOS type semiconductor device
US4025940A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1975 |
| Grant date | May 24, 1977 |
| Priority date | — |
| Expiry date | Oct 14, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/901
- WIPO fieldOther consumer goods
- WIPO sectorOther fields
Abstract
The channel current of an MOS transistor is controlled by varying the potential distribution in the source area. The source area is formed of a resistive material and provided with at least two electrodes on at least one of which a controlling voltage is applied. The current between the source and the drain terminals increases more rapidly than the linear change with respect to the increase in the voltage between the terminals, i.e. current-voltage characteristics are convex toward the lower direction. This device has excellent characteristics for use as a discharge impedance element in a sustain function circuit of an indirect keying or other circuit of an electronic musical instrument.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.