Ohmic contracts to p-type indium phosphide
US4025944A · kind A · utility
5Cited by
2References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 5, 1976 |
| Grant date | May 24, 1977 |
| Priority date | — |
| Expiry date | Apr 5, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12032
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A body of p-type indium phosphide, which was heretofore difficult to contact in a reliable low resistance manner, is ohmically contacted by an alloy contact of bismuth with preferably 2% zinc. The alloy contact is effected by placing a small pellet of the Bi-Zn alloy on the surface of the p-type InP body and then alloying at a preferred temperature of 360.degree. C for 20 seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.