Metallic support carrier for semiconductor elements

US4027326A · kind A · utility

Assignee

• W. C. Heraeus GmbH · DE

Inventors

• Franz Kummer · Munich, DE
• Gerhard Mai
• Rolf Ruthardt · Hanau, DE
• Horst Thiede · Bruchköbel, DE

Key dates

• Filing date: Mar 20, 1975
• Grant date: May 31, 1977
• Expiry date: Mar 20, 1995

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/01079
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

To improve the bonding layer for connecting wires to semiconductor chips with contact fingers, or contact strips, on the carrier, the bonding layer is formed as spongy, microporous structure, applied to discrete positions of the contact strips by screen printing, and secured to the metallic connecting strip by a diffusion zone. Preferably, the bonding layer comprises a metal of gold, palladium, silver, aluminum and copper, or an alloy of at least two of these metals, or a base alloy of one of those metals, for example gold applied as a gold paste having an average grain size of less than 5 micrometers, the layer being between 2 to 30 micrometers thick, preferably 3 to 10 micrometers.