Complementary insulated gate field effect transistor structure and process for fabricating the structure
US4027380A · kind A · utility
43Cited by
3References
3Claims
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Key dates
| Filing date | Jan 16, 1976 |
| Grant date | Jun 7, 1977 |
| Priority date | — |
| Expiry date | Jan 16, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/141
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A complementary insulated gate field effect transistor structure having complementary p-channel and n-channel devices in the same semiconductor substrate and a process for fabricating the structure incorporate oxide isolation of the active device regions, counterdoping of the p-well with impurities of opposite type to obtain a composite doping profile, reduction of Q.sub.ss in the isolation oxide, doping of the gate and field oxides with a chlorine species and phosphorus doping of the polycrystalline silicon gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.