X-ray photolithography
US4028547A · kind A · utility
56Cited by
3References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 30, 1975 |
| Grant date | Jun 7, 1977 |
| Priority date | — |
| Expiry date | Jun 30, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Photolithography of microcircuits with elements in the micrometer size range is performed with X-ray exposure of photoresist layers through electron beam generated shadow masks. Synchrotron radiation from a particle accelerator is used as an intense source of well collimated X-rays and Bragg reflection from a mosaic crystal is used to provide spectral purity for good contrast in the exposed photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.