Compensated monolithic integrated current source
US4028564A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1974 |
| Grant date | Jun 7, 1977 |
| Priority date | — |
| Expiry date | Jun 13, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S323/907
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A main semiconductor element is placed on a circuit chip; additionally, a compensating semiconductor element is placed thereon, the compensating semiconductor element being a diode, a substrate diode, a Schottky diode, a transistor with shortcircuited base emitter junction, open base transistor, or a resistor, the additional semiconductor element having one terminal connected to the main semiconductor and the other terminal either to the substrate or to a source of potential at least as large as the potential of the main element. The leakage current to be bypassed may affect the main element directly, particularly when the main element is operated in digital on-off mode, or indirectly by passing a compensating current which affects another element such as an operational amplifier, or provides directly for additional current compensating for leakage current of the main element. Placing the additional element on the same substrate and making the element of approximately the same surface extent provides for comparable passage of compensating leakage current over a wide range of semiconductor crystal temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.