Semiconductor visible image storage device
US4028565A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 27, 1975 |
| Grant date | Jun 7, 1977 |
| Priority date | — |
| Expiry date | Jun 27, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/0296
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An improved optical storage device capable of storing optical images in a charge pattern in a high-resistivity piezoelectric semiconductor layer on a semiconductor substrate. A semiconductor substrate, coated with a layer of electrically insulating material, has a layer of high-resistivity piezoelectric semiconductor covering the insulating layer and covered by a semitransparent biasing electrode. When a negative bias is applied to the electrode, and an optical pattern applied through the electrode, slow states are charged in a short interval to store, for long periods, a pattern imaged by the light. The optical pattern can then be read by using acoustic surface wave imaging techniques to provide electrical imaging of the stored optical pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.