Deposited layer type thermometric resistance structure
US4028657A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 22, 1975 |
| Grant date | Jun 7, 1977 |
| Priority date | — |
| Expiry date | Oct 22, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/021
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
On an aluminum oxide or high-alumina ceramic substrate an intermediate layer of a rare earth, titanium or iron oxide or a mixture of such oxides is provided for matching the thermal expansion coefficient of the substrate to that of a platinum layer between 0.1 and 10 .mu. m thick applied in a resistor pattern configuration on the surface of the intermediate layer. The intermediate layer, unlike a glass embedding layer, allows heat treatment of the platinum layer by heating the entire structure makes it possible to avoid the embedding to heal local defects, without impairing the integrity of the structure (which occur when glass melt) and without co-crystallizing with aluminum oxide. The platinum layer thickness is consistent with stability of the specific resistance and the temperature coefficient of resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.