Crystal growth procedure
US4030965A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1976 |
| Grant date | Jun 21, 1977 |
| Priority date | — |
| Expiry date | Jun 9, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Inorganic macrocrystals are grown free of occluded gases in a quiescent melt in a Bridgmann, Stockbarger, or similar furnace by melting down the crystal feed stock under a reduced atmosphere composed primarily of a low molecular weight gas such as hydrogen, helium or neon having the ability to diffuse through the melt at a greater rate than that of nitrogen. The gas can also include a minor amount of one or more active scavenger gases. During crystal growth, the gas atmosphere over the melt is altered by replacing the low molecular weight gas with an inert gas having a lower solubility in the melt than that of the low molecular weight gas or by increasing the pressure of the low molecular weight gas at a specified point in the growth process to significantly increase the concentration needed to form bubbles in the melt and to retard evaporation of the melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.