Method of forming an epitaxial layer on a crystalline substrate
US4032370A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 11, 1976 |
| Grant date | Jun 28, 1977 |
| Priority date | — |
| Expiry date | Feb 11, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The improved method of the present invention comprises contacting a clean and preferably etched selected crystalline substrate with a controlled thickness of a melt comprising a saturated solution of selected materials capable of forming semi-conductor junctions, preferably heterojunctions, with the substrate. The contacting is carried out while the resulting melt and substrate sandwich is shielded by a protective atmosphere of gas such as hydrogen and while the sandwich is subjected to a progressively lower temperature gradient maintained across the melt-wafer package. The method and apparatus are particularly applicable to the preparation of improved light-emitting diodes by the liquid epitaxial growth technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.