Light emitting semiconductor diode
US4032945A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1976 |
| Grant date | Jun 28, 1977 |
| Priority date | — |
| Expiry date | Jul 30, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
Abstract
A light emitting semiconductor diode comprises a first semiconductor region having a first conductivity type and a narrow forbidden band gap, a second semiconductor region, disposed on the first semiconductor region, having the first conductivity type and a low impurity concentration, a third semiconductor region, disposed on the second semiconductor region, having a second conductivity type which is opposite to the first conductivity type, and an ohmic contact disposed on the surface of the first semiconductor region, which is opposite to the second semiconductor region. The surface has a plurality of holes extending from the outer surface through the first semiconductor region toward a p-n junction between the second and third semiconductor regions, which holes are filled with a highly reflective metal having a high thermal conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.