Bulk charge transfer semiconductor device
US4032952A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1973 |
| Grant date | Jun 28, 1977 |
| Priority date | — |
| Expiry date | Apr 3, 1993 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/08
Abstract
In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.