Method of making buried-heterostructure diode injection laser
US4033796A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1975 |
| Grant date | Jul 5, 1977 |
| Priority date | — |
| Expiry date | Jun 23, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2237
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of making a buried-heterostructure (BH) diode injection laser capable of operating at low room temperature thresholds and in the lowest order TE, TM, or TEM modes. Following formation of a pump current confining layer in a substrate, an elongated groove or channel is formed in the substrate with the groove extending through the pump current confining layer. A first light guiding and carrier confining layer, an active layer, and a second light guiding and carrier confining layer are then grown successively on the grooved surface of the substrate with the active layer material having both a higher index of refraction and lower bandgap than the material(s) of the light guiding and carrier confining layers. The central portion of the active layers is completely surrounded by the light guiding and carrier confining layers and, due to the preponderance of nucleation sites at the bottom of the groove, the central portion of the active layer has a cross-section that is bowl-shaped, that is, arched inwardly toward the main body of the substrate. Due to the shape of the central portion of the active layer and the lower index of refraction of the light guiding and carrier confining l…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.