Patent · US Expired

Method of preparing portions of a semiconductor wafer surface for further processing

US4035226A · kind A · utility

6Cited by
8References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 14, 1975
Grant dateJul 12, 1977
Priority date
Expiry dateApr 14, 1995

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/942
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for producing a pattern on a semiconductor wafer during the fabrication of semiconductor devices, including integrated circuits is disclosed. A master is pressed into a layer of moldable material which is on the wafer surface to define a pattern of at least one relatively thin region and relatively thick regions therein with a high degree of definition. Thereafter the whole layer is treated, for example, to remove, by etching for example, a relatively thin region to expose a portion of the wafer surface, the relatively thick regions remaining on the wafer surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.