Shaped bodies and production of semiconductor material

US4035460A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Wolfgang Dietze
• Andreas Kasper
• Ulrich Rucha · Neufahrn, DE

Key dates

• Filing date: May 21, 1975
• Grant date: Jul 12, 1977
• Expiry date: May 21, 1995

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B25/08
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A technique for producing one or more shaped bodies of semiconductor material using the steps of depositing a layer of the semiconductor material from the gas phase onto the outer surface of a heated, hollow carrier body, or onto the mutually remote surfaces of two carrier bodies spaced from one another, and thereafter removing the carrier body or bodies from the layer or layers so formed. Each carrier body is heated indirectly by a heater body located within said hollow carrier body, or between said spaced carrier bodies, and heated to a temperature above the deposition temperature of the semiconductor material.