Charge-coupled device comprising semiconductors having different forbidden band widths
US4035665A · kind A · utility
5Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1976 |
| Grant date | Jul 12, 1977 |
| Priority date | — |
| Expiry date | Jul 8, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/335
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Asymmetrical potential wells are created in surface zones of a first doped semiconductor forming a substrate and are of greater depth at the downstream end than at the upstream end in order to ensure unidirectional transfer of the minority carriers. Regions localized at one extremity of the surface zones and constituting the potential wells are formed by a second semiconductor having a forbidden band width which is different from that of the first semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.