RF bias sputtering method for producing insulating films free of surface irregularities
US4036723A · kind A · utility
21Cited by
1References
22Claims
0Family size
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Key dates
| Filing date | Jun 1, 1976 |
| Grant date | Jul 19, 1977 |
| Priority date | — |
| Expiry date | Jun 1, 1996 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An insulating film substantially free from surface irregularities is RF bias sputtered onto a smooth polycrystalline or micro-roughened surface. Controlled sputtering is performed first at a low reemission coefficient and then, after a substantially continuous layer of insulative amorphous film is deposited over the substrate, increasing the reemission coefficient to a second higher level. A low reemission coefficient is about 0.25 and a high coefficient is about 0.7.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.