Transistorized UHF power amplifier comprising a ferroelectric sheet between a conductive base plate and a conductive pattern
US4037168A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1976 |
| Grant date | Jul 19, 1977 |
| Priority date | — |
| Expiry date | Sep 9, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
As an input and/or an output matching circuit for a transistor, a transistorized high-frequency power amplifier comprises at least one pattern of a conductive material on a sheet of a ferroelectric material placed on a conductive base plate in direct contact therewith. The ferroelectric material is represented by the formula: EQU (1 - x) BaO.xTiO.sub.2, where 0.7 .ltoreq. x < 1.0. Preferably, x .ltoreq. 0.95. The pattern may be in direct contact with the ferroelectric sheet to form a capacitor together with the base plate, a quarter-wavelength impedance transformer, or both. Preferably, the pattern is formed by integrated circuit techniques. An inductor may preferably be provided either by a portion of the pattern with a conventional dielectric material substituted for the ferroelectric material at that part of the sheet which is below the pattern portion or by a chip inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.