Etching of III-V semiconductor materials with H.sub.2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide
US4039357A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1976 |
| Grant date | Aug 2, 1977 |
| Priority date | — |
| Expiry date | Aug 27, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hydrogen transport process for cleaning the surface of an indium or gallium based semiconductor material and for depositing n-type cadmium sulfide on the cleaned semiconductor material is disclosed. The cleaning and deposition can be accomplished in sequence or simultaneously. The process entails adding hydrogen sulfide to a hydrogen gas flow in a chemical vapor deposition process. Single crystalline photovoltaic cells of p-InP/n-CdS with a 13.5% efficiency have been reproducibly fabricated. An efficiency of 4.6% has been obtained with a thin layer polycrystalline p-InP/n-CdS cell. Additionally, a p-GaAs/n-CdS heterodiode cell has been produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.