Solid state ionization chamber of silicon PN-junction type
US4039808A · kind A · utility
2Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1975 |
| Grant date | Aug 2, 1977 |
| Priority date | — |
| Expiry date | Nov 26, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/291
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
An N/P type silicon solar cell is doped with copper and encased in an aluminum sheath to form a probe. A heavy metal foil means is inserted in the probe to accomplish a solid state ionization chamber of silicon PN-junction type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.