Aluminum oxide layer bonding polymer resin layer to semiconductor device
US4040083A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1974 |
| Grant date | Aug 2, 1977 |
| Priority date | — |
| Expiry date | Nov 22, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device including a Si body, and SiO.sub.2 layer disposed on the surface of the body, an aluminum oxide layer having a thickness of about 50 A on the SiO.sub.2 layer, which is formed by applying a solution including an aluminum chelate compound onto the SiO.sub.2 layer and heating the solution at a temperature of 300.degree. C. for 30 minutes, and a polymer resin layer of polyimide disposed on the aluminum oxide layer. In this device, the adhesive-strength between the SiO.sub.2 layer and the polyimide layer is remarkably increased when compared with a semiconductor device wherein the polyimide layer is directly disposed on the SiO.sub.2 layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.