Semiconductor device having high blocking voltage with peripheral circular groove
US4040084A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1975 |
| Grant date | Aug 2, 1977 |
| Priority date | — |
| Expiry date | Sep 5, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a high blocking voltage, comprises a pair of principal surfaces opposite to each other, a circular groove cut in the peripheral portion of one of the principal surfaces and a PN junction formed along the surface of the groove and the one of the principal surfaces, wherein the region on the side of the PN junction near the one of the principal surfaces is of high impurity concentration, the outer edge of the PN junction appears in the bevel surface connecting the pair of principal surfaces, and the edge of the PN junction intersects the bevel surface in such a manner that the angle therebetween in the region of high impurity concentration is obtuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.