Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate
US4042447A · kind A · utility
10Cited by
7References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 1, 1976 |
| Grant date | Aug 16, 1977 |
| Priority date | — |
| Expiry date | Nov 1, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/169
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Relates to a method for producing a product comprising crystalline silicon on a sodium thallium type substrate by application of silicon atoms gradually to that substrate whereby oriented overgrowth occurs and also to the product produced by said method. The product is useful in semiconductor and solar cell applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.