Field effect transistor switch
US4042836A · kind A · utility
12Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1976 |
| Grant date | Aug 16, 1977 |
| Priority date | — |
| Expiry date | Apr 12, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/04123
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A field effect transistor (FET) is designed to act as an off-on type switch by the control of a driver voltage applied to its gate electrode. A driver circuit, responsive to a toggling current, provides a control of gate electrode voltage. The circuit includes means for rapidly switching the FET on and off while drawing relatively low current in the off and on states. Improvements relate to means for speeding up turn on time and reducing charge transferred to the circuit being switched by the FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.