III(A)-(VB) Type luminescent diode
US4045257A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1975 |
| Grant date | Aug 30, 1977 |
| Priority date | — |
| Expiry date | Jul 10, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Due to its dopant structure, the radiant band of a III(A) - V(B) type luminescent diode, emitting light radiation in the plane of the PN-junction, possesses differences in delay time of .ltoreq. 10.sup.-10 seconds, which permit an extension to higher frequencies. The dopant structure is characterized by an n.sup.+ type basic material incorporating an impurity concentration of N.sub.D .gtoreq. 10.sup.18 cm.sup.-3, and by a graded acceptor dopant profile which within the radiant region has a gradient of .ltoreq. 10.sup.22 cm.sup.-4 and a gradient of .gtoreq. 10.sup.23 cm.sup.-4 in the vicinity of the p.sup.+ region. Thus the injection conditions in respect to the quantum efficiencies and to the frequency range are improved. The diode is fabricated by a diffusion process and/or a liquid epitaxial process, in which definite temperatures and time relations have to be satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.