Method for preparing large single crystal thin films
US4046618A · kind A · utility
58Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 1975 |
| Grant date | Sep 6, 1977 |
| Priority date | — |
| Expiry date | Feb 26, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2636
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a large single crystal thin film not dependent upon the size or temperature resistance of the substrate crystal by first depositing an amorphous film of the crystalline material to be produced followed by heating of the amorphous film in such a manner that nucleation of epitaxial grains is propagated through the amorphous film whereby a single crystal thin film is produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.