Semiconductor devices with improved turn-off characteristics
US4047218A · kind A · utility
2Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1976 |
| Grant date | Sep 6, 1977 |
| Priority date | — |
| Expiry date | Jul 16, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10155
Abstract
Semiconductor devices, with especial reference to transistors with reduced turn-off times. This improvement includes a low-barrier height metal contact to one of the lightly-doped regions of the device as a replacement for the conventional heavily-doped region or high-low junction structure usually employed for the purpose of providing ohmic contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.