Semiconductor pressure transducer
US4050313A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1976 |
| Grant date | Sep 27, 1977 |
| Priority date | — |
| Expiry date | Jun 3, 1996 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0054
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure transducer comprises a circular diaphragm formed of a single crystal semiconductor material, at least a first strain gauge element having a piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in parallel with a predetermined axis which extends transversely of the surface of the diaphragm, at least a second strain gauge element having the piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in the direction perpendicular to the axis, and means for securing the diaphragm at the outer peripheral portion thereof. The distance between the second strain gauge element and the center of the diaphragm is differed from the distance between the center of the first strain gauge element and the latter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.