Method of manufacturing a semiconductor device and semiconductor device manufactured by using said method
US4052269A · kind A · utility
2Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1976 |
| Grant date | Oct 4, 1977 |
| Priority date | — |
| Expiry date | Oct 8, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of the diode type having a metal-semiconductor contact, and method of manufacturing such a device. The cut-off frequency of such a diode may be a few Teraherz while it is possible by realizing coplanar contacts to assemble the device directly on hyperfrequency micro circuits. The device is suitable for mixing circuits and of course also for detection purposes. The method also permits the manufacture of PIN diodes. Application: hyperfrequency diodes. FIG. 8b.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.