I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor

US4054900A · kind A · utility

Assignee

• Tokyo Shibaura Electric · JP

Inventors

• Yukuya Tokumaru · Yokohama, JP
• Masanori Nakai · Yokohama, JP
• Satoshi Shinozaki · Yokohama, JP
• Junichi Nakamura · Settsu, JP
• Shintaro Ito · Tokyo, JP
• Yoshio Nishi · Palo Alto, US

Key dates

• Filing date: Dec 24, 1975
• Grant date: Oct 18, 1977
• Expiry date: Dec 24, 1995

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/65

Abstract

An integrated injection logic semiconductor device which comprises an N type semiconductor substrate; a P type semiconductor layer superposed on the N type semiconductor substrate; a first N type region formed in the P type semiconductor layer; a second N type region formed in the P type semiconductor layer; and a P type region formed in the first N type region, wherein the first N type region is connected to the N type semiconductor substrate through an N type connector region formed between the first N type region and N type semiconductor substrate.