Reducing the switching time of semiconductor devices by nuclear irradiation
US4056408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1976 |
| Grant date | Nov 1, 1977 |
| Priority date | — |
| Expiry date | Mar 17, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reducing the switching time of certain semiconductor devices and particularly gain-operated semiconductor devices. The depth of maximum defect generation in a given type of semiconductor devices having a block PN junction is determined on irradiation with a given radiation source emitting particles with molecular weight of at least one (1), preferably protons or alpha particles; and the energy level of the radiation source adjusted to provide the depth of maximum defect generation adjacent a blocking PN junction of the type of semiconductor device. At least one semiconductor device of said given type of semiconductor device is positioned with a major surface thereof to be exposed to the adjusted radiation source, and thereafter irradiated with the adjusted radiation source to a given dosage level to reduce the switching time of the semiconductor device. Preferably, the semiconductor device is positioned and the energy level of the radiation source adjusted to irradiate through the major surface of the device closer the higher impurity region adjoining the blocking PN junction, and to provide the maximum defect generation in said higher impurity region adjoining the bloc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.