Plasma etching process
US4057460A · kind A · utility
19Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1976 |
| Grant date | Nov 8, 1977 |
| Priority date | — |
| Expiry date | Nov 22, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved plasma etching process. There is disclosed apparatus and method (or process) for etching patterns in metal films deposited on a semiconductor wafer. This improved process is particularly useful in the fabrication of certain semiconductor devices, such as MOS and bipolar integrated circuits and Schottky transistors (semiconductor/metal interfaces) which employ contact "fingers". The fingers are constructed from layers of metal, such as aluminum, tungsten, and titanium with aluminum being the outermost layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.