Semiconductor device
US4057819A · kind A · utility
8Cited by
5References
10Claims
0Family size
Inventors
Key dates
| Filing date | Aug 5, 1976 |
| Grant date | Nov 8, 1977 |
| Priority date | — |
| Expiry date | Aug 5, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
The invention relates to a photo-sensitive solid-state electronic device whose anode-cathode current is modified by photon induced changes in the electrical condition of a dielectric layer on the semiconductor body. The invention is primarily concerned with the nature of the photosensitive material used for the device which is chosen to cause charge injection into the dielectric layer. The semiconductor body may define a FET, an MIS or a CCD device and the photosensitive material is conveniently an optically active organic dyestuff.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.