Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
US4058887A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 13, 1972 |
| Grant date | Nov 22, 1977 |
| Priority date | — |
| Expiry date | Oct 13, 1992 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an insulated gate field effect transistor comprising providing a semiconductor body portion of one type conductivity, providing on a surface of said body portion an impurity masking layer having two adjacent apertures with the portion of the masking layer between said apertures and part of its thickness being of a masking material other than silicon dioxide and also capable of masking the silicon against oxidation, providing by impurity introduction through said apertures spaced surface regions of opposite type conductivity in said body portion, subjecting at least the surface portions of the body portion overlying the opposite type surface regions and adjacent the oxidation masking material to an oxidation treatment causing thereon the growth of a silicon dioxide that penetrates into the body portion except where masked by the oxidation masking material forming a silicon mesa under said oxidation masking material, applying a gate electrode insulated from and over the surface portion extending between the opposite type surface regions, and applying source and drain connections to the opposite type surface regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.