Electron-emissive semiconductor devices
US4060823A · kind A · utility
10Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1976 |
| Grant date | Nov 29, 1977 |
| Priority date | — |
| Expiry date | Apr 9, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-emissive semiconductor device such as a photocathode or an electron multiplier, consists of separate regions of semiconductor material spaced apart by a barrier which reduces current flow between the regions. The barriers improve the performance of the device by preventing excess electron emission currents and reduce image spreading.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.