Light activated thyristor capable of activation by intensity radiation
US4060826A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 2, 1976 |
| Grant date | Nov 29, 1977 |
| Priority date | — |
| Expiry date | Aug 2, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
The present invention pertains to a light activated thyristor which increases the current density of light-generated carriers by means of a low resistance path from an area of carrier generation in a base zone of a first conductivity type into a portion of an adjacent emitter zone of a second conductivity type. In one embodiment the low resistance path takes the form of an annular gate electrode affixed to the base zone and having a projection bordering the base-emitter PN junction. In another embodiment the low resistance path takes the form of a ballast segment disposed in the base zone, the ballast segment having an opening for funnelling the carriers to the base-emitter PN junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.