Semiconductor device and a method of making the same
US4060827A · kind A · utility
7Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1975 |
| Grant date | Nov 29, 1977 |
| Priority date | — |
| Expiry date | Aug 25, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor wherein a termination of a PN junction is covered with a silicon oxide film and all the exposed surfaces of said film are covered with a silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.