Semiconductor device with two passivating layers
US4063275A · kind A · utility
8Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1975 |
| Grant date | Dec 13, 1977 |
| Priority date | — |
| Expiry date | Oct 22, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductive device is provided which includes a single crystal substrate. A first insulating layer arranged on one surface of the substrate is of polycrystalline silicon containing oxygen. A second insulating layer formed on the first insulating layer is of polycrystalline silicon containing one of a group consisting of nitrogen, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and silicone resin. The substrate includes at least one PN junction which extends to the said surface of the substrate. A novel method of making is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.