Method of fabrication of a charge-coupled device
US4065847A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1976 |
| Grant date | Jan 3, 1978 |
| Priority date | — |
| Expiry date | Aug 30, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
The fabrication of a charge-coupled device consists in forming an insulating layer in the form of a periodic series of insulating steps, in depositing a metallic layer on alternate steps so as to form electrodes, in implanting regions doped with a type opposite to the substrate into the surface of the semiconductor by directing an ion beam through the insulating steps of small thickness which are transparent to the beam, and in connecting each electrode to a control line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.