Patent · US Expired

Method of fabrication of a charge-coupled device

US4065847A · kind A · utility

7Cited by
4References
1Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 30, 1976
Grant dateJan 3, 1978
Priority date
Expiry dateAug 30, 1996

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/981

Abstract

The fabrication of a charge-coupled device consists in forming an insulating layer in the form of a periodic series of insulating steps, in depositing a metallic layer on alternate steps so as to form electrodes, in implanting regions doped with a type opposite to the substrate into the surface of the semiconductor by directing an ion beam through the insulating steps of small thickness which are transparent to the beam, and in connecting each electrode to a control line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.