Method of fabricating a semiconductor device
US4066485A · kind A · utility
6Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1977 |
| Grant date | Jan 3, 1978 |
| Priority date | — |
| Expiry date | Jan 21, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device comprises steps for forming recesses which can be used in the subsequent visual alignment of photomasks. The novel recess forming steps are so linked with a conventional processing step that the total number of steps required for the formation of the recesses is reduced. The present method is particularly adaptable to the fabrication of unisurface silicon controlled rectifiers wherein a doped isolation-type grid is formed to define each device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.