Method for stripping photolacquers

US4070203A · kind A · utility

Assignee

• Merck Patent GmbH · DE

Inventors

• Karl-Heinz Neisius · Darmstadt, DE
• Wilhelm Baumer

Key dates

• Filing date: Nov 13, 1975
• Grant date: Jan 24, 1978
• Expiry date: Nov 13, 1995

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31133
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Hardened photolacquer on semi-conductors and integrated circuits for etching purposes are stripped therefrom employing, preferably at a temperature above 75.degree. C., a stripping composition consisting essentially of 20-50 weight percent of at least one alkylbenzenesulfonic acid of 12-20 carbon, and 80-50 weight percent of a chlorine-free, aromatic hydrocarbon having a boiling point above 150.degree. C.