Patent · US Expired

Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency

US4070206A · kind A · utility

47Cited by
8References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 20, 1976
Grant dateJan 24, 1978
Priority date
Expiry dateMay 20, 1996

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/544

Abstract

A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.